01/99 b-45 IFN5432, ifn5433, ifn5434 n-channel silicon junction field-effect transistor absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 25 v continuous forward gate current 100 ma continuous device power dissipation 300 mw power derating 2.4 mw/c toe52 package dimensions in inches (mm) pin configuration 1 source, 2 drain, 3 gate & case at 25c free air temperature: IFN5432 ifn5433 ifn5434 process nj903 static electrical characteristics min max min max min max unit test conditions gate source breakdown voltage v (br)gss C 25 C 25 C 25 v i g = C 1a, v ds = ? v gate reverse current i gss C 200 C 200 C 200 pa v gs = C 15 v, v ds = ? v C 200 C 200 C 200 na v gs = C 15 v, v ds = ? v t a = 150c gate source cutoff voltage v gs(off) C 4 C 10 C 3 C 9 C 1 C 4 v v ds = 5 v, i g = 3 na drain saturation current (pulsed) i dss 150 100 30 ma v ds = 15 v, v gs = ? v drain cutoff current i d(off) 200 200 200 pa v ds = 5v, v gs = C 10v 200 200 200 na v ds = 5v, v gs = C 10v t a = 150c drain source on voltage v ds 50 70 100 mv v gs = ? v, i d = 10 ma static drain source on resistance r ds(on) 25 7 10 v ds = ? v, i d = 10 ma dynamic electrical characteristics drain source on resistance r ds(on) 5710 v gs = ? v, i d = ? a f = 1 khz common source input capacitance c iss 60 60 60 pf v ds = ? v, v gs = C 10 v f = 1 mhz common source reverse c rss 20 20 20 pf v ds = ? v, v gs = C 10 v f = 1 mhz transfer capacitance switching characteristics turn on delay time t d(on) 444ns v dd = 1.5 v, v gs(on) = ?v rise time t r 111ns v gs(off) = C 12 v, i d(on) = 10 ma turn off delay time t d(off) 666ns (IFN5432) r l = 145 fall time t f 30 30 30 ns (ifn5433) r l = 143 (ifn5433) r l = 140 analog low on resistance switches choppers 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-45
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